jiangsu changji ang electronics technology co., ltd t o-92 plastic-encapsulate transistors MPS751 transist or (pnp) features switching and amplifier applications maximum ratings (t a =25 unless other wise noted) symbol para meter value unit v cbo coll ector-base voltage -80 v v ce o coll ector-emitter voltage -60 v v eb o emitter-base v oltage -5 v i c coll ector current -continuous -2 a p c coll ector dissipation 0.625 w electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit co llector-base breakdown voltage v (b r)cbo i c = -100 a,i e = 0 -80 v co llector-emitter breakdown voltage v (b r)ceo * i c = -10ma,i b = 0 -60 v emitter-b ase breakdown voltage v ( br)ebo i e =-1 0 a,i c =0 -5 v co llector cut-off current i cb o v cb = -80v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-4 v,i c =0 -0.1 a h fe(1) * v ce =-2 v,i c = -50ma 75 h fe(2) * v ce =-2 v,i c = -500ma 75 h fe(3) * v ce =-2 v,i c = -1a 75 dc cu rrent gain h fe(4) * v ce =-2 v,i c = -2a 40 co llector-emitter saturation voltage v ce (sat) * i c =-2 a,i b =-200 ma i c =-1 a,i b =-100 ma -0.5 -0.3 v bas e -emitter saturation voltage v be( sat) * i c =-1 a,i b =-100ma -1.2 v base -emitter on voltage v be( on) * v ce =-2 v,i c =-1 a -1 v t ransition frequency f t v ce =-5 v,i c = -50ma,f=100mhz 75 mhz * pulse test: pulse width<= 300us, duty cycle = 2.0%. to -92 1. emitter 2. base 3. collect or t j junctio n temperature 150 t st g s torage temperature -55-150 r ja t hermal resistance f rom junction t o ambient 200 / w www.cj-elec.com 1 e , jun ,201 6 1 3 2
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